tf256th no. a1617-1/7 ordering number : ENA1617b 91212 tkim/10511 tkim tc-00002535/n2509gb tkim tc-00002097 sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ features ? high gain : g v =2.7db typ (v cc =2v, r l =2.2k , cin=5pf, v in =10mv, f=1khz) ? ultrasmall package facilitates miniaturization in end products ? best suited for use in electret condenser microphone for audio equipments and telephones ? excellent transient characteristics ? adoption of fbet process ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit gate-to-drain voltage v gdo --20 v gate current i g 10 ma drain current i d 1ma allowable power dissipation p d 100 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7031a-001 product & package information ? package : vtfp ? jeita, jedec : sc-106a ? minimum packing quantity : 8,000 pcs./reel packing type: tl marking electrical connection 1 : drain 2 : source 3 : gate sanyo : vtfp 1 3 12 2 3 1.4 1.2 0.8 0.34 0.07 0.07 0.2 0.2 0.25 0.2 0.45 0.1 0 to 0.02 tl tf256th-3-tl-h tf256th-4-tl-h tf256th-5-tl-h 1 3 2 lot no. lot no. n rank tf256th n-channel silicon juncton fet electret condenser microphone applications
tf256th no. a1617-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit rank min typ max gate-to-drain breakdown voltage v (br)gdo i g =--100 a --20 v cutoff voltage v gs (off) v ds =2v, i d =1 a --0.1 --0.35 --1.0 v drain current i dss *v ds =2v, v gs =0v 3 100 180 a 4 140 280 5 240 450 forward transfer admittance | yfs | v ds =2v, v gs =0v, f=1khz 0.75 1.7 ms input capacitance ciss v ds =2v, v gs =0v, f=1mhz 3.1 pf reverse transfer capacitance crss 1.0 pf [ta=25c, v cc =2.0v, r l =2.2k , cin=5pf, see speci ed test circuit.] voltage gain g v v in =10mv, f=1khz 3 1.0 db 4 2.0 5 3.0 reduced voltage characteristic g vv v in =10mv, f=1khz, v cc =2.0v 1.5v 3 --0.5 --1.0 db 4 --0.6 --1.3 5 --0.9 --2.0 frequency characteristic gvf f=1khz to 110hz --1.0 db total harmonic distortion thd v in =30mv, f=1khz 3 1.4 % 4 0.9 5 0.35 output noise voltage v no v in =0v, a curve --105 --100 db * : the tf256th is classi ed by i dss as follows : (unit : a) rank 3 4 5 i dss 100 to 180 140 to 280 240 to 450 test circuit ordering information device package shipping memo tf256th-3-tl-h vtfp 8,000pcs./reel pb free and halogen free tf256th-4-tl-h vtfp 8,000pcs./reel tf256th-5-tl-h vtfp 8,000pcs./reel osc 5pf + 33 f 2.2k v cc =2.0v v cc =1.5v v vtvm thd voltage gain frequency characteristic distortion reduced voltage characteristic
tf256th no. a1617-3/7 i d -- v ds drain-to-source voltage, v ds -- v drain current, i d -- a i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- a 0 0.5 4.0 4.5 5.0 1.0 1.5 2.0 2.5 3.0 3.5 400 300 350 200 250 100 50 150 0 it15213 --0.10v --0.05v --0.15v --0.20v -- 0 . 2 5 v --0.30v v gs =0v 450 350 250 50 150 --0.50 --0.40 --0.30 --0.20 --0.10 0 --0.45 --0.35 --0.25 --0.15 --0.05 500 400 300 200 100 0 it16271 v ds =2v i dss =450 a 300 a 150 a 100 a v gs (off) -- i dss | yfs | -- i dss ciss -- v ds crss -- v ds drain current, i dss -- a forward transfer admittance, | y fs | -- ms drain current, i dss -- a cutoff voltage, v gs (off) -- v drain-to-source voltage, v ds -- v input capacitance, ciss -- pf drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- a g v -- i dss drain current, i dss -- a voltage gain, g v -- db it15218 10 7 5 3 2 1.0 1.0 10 23 57 357 2 v gs =0v f=1mhz 1.0 7 5 3 3 2 1.0 10 23 57 357 2 it15219 v gs =0v f=1mhz v ds =2v ta=75 c 25 c --25 c 450 350 250 50 150 --0.50 --0.40 --0.30 --0.20 --0.10 0 --0.45 --0.35 --0.25 --0.15 --0.05 400 300 200 100 0 it15215 0 0.20 0.15 0.10 0.05 0.25 0.30 0.35 0.40 0.45 0.50 v ds =2v i d =1 a 0 0.5 1.0 1.5 2.0 2.5 50 200 300 400 500 100 150 250 350 450 it16272 50 100 200 300 400 500 150 250 350 450 --0.5 2.0 3.0 2.5 1.0 0 0.5 1.5 3.5 50 100 200 300 400 500 150 250 350 450 it16273 v ds =2v v gs =0v f=1khz it16274 g v : v cc =2v v in =10mv f=1khz r l =2.2k cin=5pf i dss : v ds =2v
tf256th no. a1617-4/7 g v -- cin electret capacitance, cin -- pf voltage gain, g v -- db g v -- v cc supply voltage, v cc -- v voltage gain, g v -- db 01234 6 5 -- 3 -- 2 -- 1 2 0 1 4 6 3 5 7 it16275 it16276 g v : v in =10mv f=1khz r l =2.2k cin=5pf i dss =450 a 300 a 150 a 02468 16 12 14 10 --10 -- 8 -- 6 0 -- 4 -- 2 4 8 2 6 10 g v : v cc =2v v in =10mv f=1khz r l =2.2k i dss =450 a 300 a 150 a 100 a 100 a thd -- i dss drain current, i dss -- a total harmonic distortion, thd -- % thd -- v in input voltage, v in -- mv total harmonic distortion, thd -- % g vv -- i dss drain current, i dss -- a reduced voltage characteristic, g vv -- db 0 it16279 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0.2 1.0 2.4 2.0 2.2 thd : v cc =2v v in =30mv f=1khz r l =2.2k cin=5pf i dss : v ds =2v 10 100 1.0 7 5 3 2 7 5 3 2 7 5 3 2 0.1 0 50 100 150 200 it16278 --1.6 --1.4 --1.2 --1.0 --0.8 --0.4 --0.6 --0.2 0 g vv : v cc =2v 1.5v v in =10mv f=1khz r l =2.2k cin=5pf i dss : v ds =2v thd : v cc =2v f=1khz r l =2.2k cin=5pf 50 100 200 300 400 500 150 250 350 450 50 100 200 300 400 500 150 250 350 450 it16277 i dss =100 a 300 a 450 a 150 a p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- mw 80 100 120 40 20 60 0 0 160 140 120 100 80 60 40 20 it15227
tf256th no. a1617-5/7 taping speci cation tf256th-3-tl-h, tf256th-4-tl-h, tf256th-5-tl-h
tf256th no. a1617-6/7 outline drawing land pattern example tf256th-3-tl-h, tf256th-4-tl-h, tf256th-5-tl-h mass (g) unit mm unit: mm 0.0012 * for reference 0.5 0.4 0.45 0.45 0.45 0.45 1.1
tf256th ps no. a1617-7/7 this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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